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Samsung DDR3 1066 ECC DIMM 4Gb
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Technical characteristics and specs

General characteristics
Memory type: DDR3;
Form factor: DIMM 240-pin;
Clock frequency: 1066 MHz;
Volume: 1 module 4 GB;
ECC support: yes;
UN-Buffered Memory (Registered): no;
Low Profile Bracket (Low Profile): no;
Timings
CAS Latency (CL): 7;
RAS to CAS Delay (tRCD): 7;
Row Precharge Delay (tRP): 7;
Additionally
The number of chips of each module: 18, two-way packaging;
Supply voltage: 1.5 In;
 
  
 
 
Product photography
Samsung DDR3 1066 ECC DIMM 4Gb pictures
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  • CAS Latency (CL): 7
 
 
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Comments and reviews to the Samsung DDR3 1066 ECC DIMM 4Gb

All product specifications in this catalog are based on information taken from official sources, including the official manufacturer’s Samsung websites, which we consider as reliable.

Unfortunately, even the official documents may contain mistakes and printing errors – we are not able to confirm that all of these data are precise and represent the facts. Most of the manufacturers reserve the right to change the product characteristics or complement without notice.

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