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Samsung DDR3 1066 ECC DIMM 4Gb

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Technical characteristics and specs

General characteristics
Memory type: DDR3;
Form factor: DIMM 240-pin;
Clock frequency: 1066 MHz;
Volume: 1 module 4 GB;
ECC support: yes;
UN-Buffered Memory (Registered): no;
Low Profile Bracket (Low Profile): no;
Timings
CAS Latency (CL): 7;
RAS to CAS Delay (tRCD): 7;
Row Precharge Delay (tRP): 7;
Additionally
The number of chips of each module: 18, two-way packaging;
Supply voltage: 1.5 In;
 
 
 
 
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Brief specs
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  • CAS Latency (CL): 7
 
 
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