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Samsung DDR3 1866 8Gb ECC DIMMs
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Technical characteristics and specifications

General characteristics
Memory type: DDR3;
Form factor: DIMM 240-pin;
Clock frequency: 1866 MHz;
Volume: 1 module 8 GB;
ECC support: yes;
UN-Buffered Memory (Registered): no;
Low Profile Bracket (Low Profile): no;
Timings
CAS Latency (CL): 13;
RAS to CAS Delay (tRCD): 13;
Row Precharge Delay (tRP): 13;
Additionally
The number of chips of each module: 18, two-way packaging;
Supply voltage: 1.5 In;
 
  
 
 
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Samsung DDR3 1866 8Gb ECC DIMMs pictures
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Comments and reviews to the Samsung DDR3 1866 8Gb ECC DIMMs

All product specifications in this catalog are based on information taken from official sources, including the official manufacturer’s Samsung websites, which we consider as reliable.

Unfortunately, even the official documents may contain mistakes and printing errors – we are not able to confirm that all of these data are precise and represent the facts. Most of the manufacturers reserve the right to change the product characteristics or complement without notice.

We strongly recommend using the published information as a basic product Samsung DDR3 1866 8Gb ECC DIMMs review. Please refine the important parameters by the selling assistant when making a purchase.

All content included in this catalog is the intellectual property of Specsan. Any publication or copying (full or partial) without a reference to the source page is prohibited.
 
 
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