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Silicon Power SP001GBRRE667O01
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Tech specs and features

General characteristics
Memory type: DDR2;
Form factor: DIMM 240-pin;
Clock frequency: 667 MHz;
Bandwidth: 5300 MB/s;
Volume: 1 module 1 GB;
ECC support: yes;
UN-Buffered Memory (Registered): Yes;
Low Profile Bracket (Low Profile): no;
Timings
CAS Latency (CL): 5;
RAS to CAS Delay (tRCD): 5;
Row Precharge Delay (tRP): 5;
Additionally
The number of chips of each module: 18, two-way packaging;
Supply voltage: 1.8 In;
 
  
 
 
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Silicon Power SP001GBRRE667O01 pictures
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Comments and reviews to the Silicon Power SP001GBRRE667O01

All product specifications in this catalog are based on information taken from official sources, including the official manufacturer’s Silicon Power websites, which we consider as reliable.

Unfortunately, even the official documents may contain mistakes and printing errors – we are not able to confirm that all of these data are precise and represent the facts. Most of the manufacturers reserve the right to change the product characteristics or complement without notice.

We strongly recommend using the published information as a basic product Silicon Power SP001GBRRE667O01 review. Please refine the important parameters by the selling assistant when making a purchase.

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