Silicon Power
Memory modules
Silicon Power SP004GBFRE800S01
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Silicon Power SP004GBFRE800S01
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Tech specifications and characteristics
General characteristics Memory type: DDR2; Form factor: FB-DIMM 240-pin; Clock frequency: 800 MHz; Bandwidth: 6400 MB/s; Volume: 1 module 4 GB; ECC support: yes; UN-Buffered Memory (Registered): Yes; Low Profile Bracket (Low Profile): no; Timings CAS Latency (CL): 5; RAS to CAS Delay (tRCD): 5; Row Precharge Delay (tRP): 5; Additionally The number of chips of each module: 36, bilateral packaging; Supply voltage: 1.8 In; Radiator: yes;
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Popular today
| | - 1 DDR2 memory module
- the volume of module 4 GB
- form factor DIMM 240-pin
- frequency 800 MHz
- CAS Latency (CL): 6
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| | - 2 module DDR2 memory
- the volume of module 4 GB
- form factor DIMM 240-pin
- frequency 800 MHz
- radiator for additional cooling
- CAS Latency (CL): 5
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| | - 6 DDR3
- the volume of module 4 GB
- form factor DIMM 240-pin
- frequency 1600 MHz
- radiator for additional cooling
- CAS Latency (CL): 9
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Brief specs
- 1 DDR3 memory module
- the volume of module 4 GB
- form factor SODIMM, 204-pin
- frequency 1600 MHz
- CAS Latency (CL): 11
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Brief specs
- 1 DDR3 memory module
- the volume of module 4 GB
- form factor SODIMM, 204-pin
- frequency 1600 MHz
- CAS Latency (CL): 11
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Brief specs
- 1 module DDR memory
- the volume of module 1 GB
- form factor DIMM 184-pin
- frequency of 400 MHz
- CAS Latency (CL): 3
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